HMA41GR7BJR4N

Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to 1.26V) VPP - 2.5V (2.375V to 2.75V) VDDSPD=2.25V to 2.75V Functionality and operations comply with the DDR4 SDRAM datasheet 16 internal banks Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available Data transfer rates: PC4-2666, PC4-2400, PC4-2133 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Supports ECC error correction and detection On-Die Termination (ODT) Temperature sensor with integrated SPD This product is in compliance with the RoHS directive. Per DRAM Addressability is supported Internal Vref DQ level generation is available Write CRC is supported at all speed grades DBI (Data Bus Inversion) is supported(x8) CA parity (Command/Address Parity) mode is supported